Memoirs of the Faculty of Engineering, Yamaguchi University

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Memoirs of the Faculty of Engineering, Yamaguchi University Volume 49 Issue 1
published_at 1998

GROWTH-THICKNESS DEPENDENCE OF EXCITONIC LUMINESCENCE FROM ZnS EPIYTAXIAL LAYERS

ZnS薄膜における励起子発光特性の成長膜厚依存性
Sakashita Takashi
Sasaki Chiharu
Nakamura Seiji
Yamada Yoichi
Taguchi Tsunemasa
Yokogawa Toshiya
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Descriptions
減圧有機金属化学気相成長法により,GaAs (100)面基板上へZnSヘテロエピタキシャル薄膜の成長を行った。GaAsとの格子不整合が4.3%と非常に大きいにもかかわらず,ZnSエピタキシャル薄膜の膜厚を2μmから8μmと厚く成長することで,X線Rocking curveおよび自由励起子発光線の半値全幅は漸次的に減少し,最小でそれぞれ144 arcsecおよび1.7meVとこれまでに報告のない非常に高品質なZnS薄膜の成長に成功した。さらに,自由励起子発光線は軽い正孔による自由励起子発光線と重い正孔による自由励起子発光線に分裂していることが観測された。この分裂は,GaAs基板との熱膨張係数の違いからくる引っ張り歪みに起因したものであるとして説明された。
Creator Keywords
Light-hole exciton
Heavy-hole exciton
low-pressure MOCVD
Bimetallic strip model
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