Memoirs of the Faculty of Engineering, Yamaguchi University

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Memoirs of the Faculty of Engineering, Yamaguchi University Volume 52 Issue 1
published_at 2001-10

Characteristics of Recrystallized poly-Si Film Prepared by ELA of a-Si Deposited on SiO2 / SiN / Glass Using PE-CVD Method

Characteristics of Recrystallized poly-Si Film Prepared by ELA of a-Si Deposited on SiO2 / SiN / Glass Using PE-CVD Method
Abe Hisashi
Matsuo Naoto
Taguchi Ryouhei
Nouda Tomoyuki
Hamada Hiroki
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A030052000101.pdf
Descriptions
In this study, we investigate the characteristic of the poly-Si film prepared by the excimer laser annealing (ELA) method of a-Si deposited using plasma enhanced chemical vapor deposition (PE-CVD) method on SiO2 / SiN / glass substrate (SiN substrate). The crystallinity of the poly-Si film on the SiN substrate is better than that using low pressure chemical vapor deposition (LPCVD) method on the quartz glass substrate (quartz substrate). The grain size of the poly-Si on the SiN substrate is smaller than that on the quartz substrate. These phenomena are due to the difference of the crystal growth mechanism. The stress in the poly-Si film on the SiN substrate is smaller than that on the quartz substrate. For the crystal growth mechanism on the SiN substrate, it is considered that hydrogens in the poly-Si play an important role.
Creator Keywords
ELA
poly-Si
hydrogen
SiN
stress
crystal growth mechanism