Characteristics of Recrystallized poly-Si Film Prepared by ELA of a-Si Deposited on SiO2 / SiN / Glass Using PE-CVD Method

Characteristics of Recrystallized poly-Si Film Prepared by ELA of a-Si Deposited on SiO2 / SiN / Glass Using PE-CVD Method

Creators Kawamoto Naoya

Creators Abe Hisashi

Creators Matsuo Naoto

Creators Taguchi Ryouhei

Creators Nouda Tomoyuki

Creators Hamada Hiroki

In this study, we investigate the characteristic of the poly-Si film prepared by the excimer laser annealing (ELA) method of a-Si deposited using plasma enhanced chemical vapor deposition (PE-CVD) method on SiO2 / SiN / glass substrate (SiN substrate). The crystallinity of the poly-Si film on the SiN substrate is better than that using low pressure chemical vapor deposition (LPCVD) method on the quartz glass substrate (quartz substrate). The grain size of the poly-Si on the SiN substrate is smaller than that on the quartz substrate. These phenomena are due to the difference of the crystal growth mechanism. The stress in the poly-Si film on the SiN substrate is smaller than that on the quartz substrate. For the crystal growth mechanism on the SiN substrate, it is considered that hydrogens in the poly-Si play an important role.

[ISSN]1345-5583

[NCID]AA11422756

[isVersionOf] [URI]http://memoirs.lib-e.yamaguchi-u.ac.jp/