Memoirs of the Faculty of Engineering, Yamaguchi University

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Memoirs of the Faculty of Engineering, Yamaguchi University Volume 56 Issue 2
published_at 2006-03

Luminescence efficiency of InGaN-based quantum-well LEDs under selective excitation

InGaN系量子井戸LED構造の選択励起下における発行効率
Kuromoto Michiyoshi
Kadokawa Kenichi
Kudo Hiromitsu
Okagawa Hiroaki
fulltext
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A040056000201.pdf
Descriptions
Luminescence efficiency of InxGa1-xN-based light-emitting diodes (LEDs) has been studied by means of excitation-power-density- and temperature-dependent photoluminescence spectroscopy. The internal quantum efficiency (IQE) of LEDs was evaluated at various excitation photon energies using a wavelength-tunable dye laser system. The IQE obtained under selective excitation of InxGa1-xN active layers was approximately 1.5 times as high as that obtained under band-to-band excitation of GaN and AlGaN cladding layers.
Creator Keywords
In_xGa_<1-x>N-based LEDs
LEPS
photoluminescence
selective excitation
luminescence efficiency