山口県大学共同リポジトリ

Characterization of structural defects in semipolar {202^-1} GaN layers grown on {224^-3} patterned sapphire substrates

Japanese Journal of Applied Physics Volume 53 Issue 3 pp. 035502 -

published_at 2014-03

Creators : Yamane Keisuke Inagaki Takashi Hashimoto Yasuhiro Koyama Masakazu Okada Narihito Tadatomo Kazuyuki Publishers : Japan Society of Applied Physics

Characterization of semipolar {11$ \bar 2 $2} light-emitting diodes using a hole blocking layer

Physica Status Solidi (C) Current Topics in Solid State Physics Volume 11 Issue 3-4 pp. 775 - 777

published_at 2014-04

Creators : Nakao Kota Haziq Muhammad Okamura Yasumasa Yamane Keisuke Okada Narihito Tadatomo Kazuyuki Publishers : WILEY-VCH Verlag GmbH & Co. KGaA

Epitaxial lateral overgrowth of thick semipolar {11$ \bar 2 $2} GaN by hydride vapor phase epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics Volume 11 Issue 3-4 pp. 549 - 552

published_at 2014-04

Creators : Hashimoto Yasuhiro Furuya Hiroshi Ueno Motohisa Yamane Keisuke Okada Narihito Tadatomo Kazuyuki Publishers : WILEY-VCH Verlag GmbH & Co. KGaA

Generation of dislocation clusters by glide m-planes in semipolar GaN layers

Physica Status Solidi (A) Applications and Materials Science Volume 211 Issue 4 pp. 736 - 739

published_at 2014-04

Creators : Okada N. Ishikawa A. Yamane K. Tadatomo K. Jahn U. Grahn H. T. Publishers : WILEY-VCH Verlag GmbH & Co. KGaA

Self-separation of large freestanding semipolar (11-22) GaN films using r-plane patterned sapphire substrates

Japanese Journal of Applied Physics Volume 52 Issue 8S pp. 08JA09 -

published_at 2013-08

Creators : Furuya Hiroshi Yamane Keisuke Okada Narihito Tadatomo Kazuyuki Publishers : Japan Society of Applied Physics through the Institute of Pure and Applied Physics

Epitaxy Part B. Epitaxial growth of GaN on Ppatterned sapphire substrates

Topics in applied physics Volume 126 pp. 59 - 81

published_at 2013

Creators : Tadatomo Kazuyuki Publishers : Springer

Fabrication and evaluation of GaN layer composed of m- and {10-11} facet structure

Japanese journal of applied physics Volume 52 Issue 1 pp. 01AF06 -

published_at 2013-01-25

Creators : Okada Narihito Takami Masaki Yamada Yoichi Tadatomo Kazuyuki Publishers : 日本物理学会 | 応用物理学会

Successful natural stress-induced separation of hydride vapor phase epitaxy-grown GaN layers on sapphire substrates

Journal of crystal growth Volume 358 pp. 1 - 4

published_at 2012-11-01

Creators : Yamane K. Ueno M. Furuya H. Okada N. Tadatomo K. Publishers : North-Holland | Elsevier Science

Reduction in dislocation density of semipolar GaN layers on patterned sapphire substrates by hydride vapor phase epitaxy

Applied physics express Volume 5 Issue 9 pp. 095503 -

published_at 2012-09

Creators : Yamane Keisuke Ueno Motohisa Uchida Katsumi Furuya Hiroshi Okada Narihito Tadatomo Kazuyuki Publishers : Japan Society of Applied Physics through Institute of Pure and Applied Physics

Improved external quantum efficiency and controlled light distribution for light-emitting diodes with cone array composed of SiO _xN_y

Applied physics express Volume 5 Issue 9 pp. 092102 -

published_at 2012-09

Creators : Uchida Akimi Miyoshi Seita Yamane Keisuke Okada Narihito Tadatomo Kazuyuki Publishers : Japan Society of Applied Physics through Institute of Pure and Applied Physics

Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on patterned sapphire substrates

Semiconductor science and technology Volume 27 Issue 2 pp. 024003 -

published_at 2012-02

Creators : Okada Narihito Tadatomo Kazuyuki Publishers : Institute of Physics | IOP Pub.

Behavior of misfit dislocations in semipolar InGaN/GaN grown by MOVPE

Physica status solidi. C, Current topics in solid state physics : PSS Volume 9 Issue 3-4 pp. 488 - 491

published_at 2012-03

Creators : Kuwahara Takaaki Kuwano Noriyuki Kurisu Akihiko Okada Narihito Tadatomo Kazuyuki Publishers : Wiley-VCH Verlag GmbH & Co. KGaA

Growth of {11-22} GaN on shallowly etched r-plane patterned sapphire substrates

Physica status solidi. C, Current topics in solid state physics : PSS Volume 9 Issue 3-4 pp. 568 - 571

published_at 2012-03

Creators : Furuya Hiroshi Okada Narihito Tadatomo Kazuyuki Publishers : Wiley-VCH Verlag GmbH & Co. KGaA

Growth mechanism of unpolar nitride semiconductor on maskless patterned sapphire substrates

日本結晶成長学会誌 Volume 38 Issue 4 pp. 231 - 240

published_at 2012-01

Creators : 岡田成仁只友一行 Publishers : 日本結晶成長学会

Structural and optical evaluation of InGaN/GaN multi-quantum wells on template consisting of in-plane alternately arranged relaxed InGaN and GaN

Journal of applied physics Volume 111 Issue 4 pp. 043508 -

published_at 2012-02-15

Creators : Okada Narihito Yamada Yoichi Tadatomo Kazuyuki Publishers : American Institute of Physics

Green light-emitting diodes fabricated on semipolar (11-22) GaN on r-plane patterned sapphire substrate

Physica status solidi. A, Applications and materials science : PSS Volume 209 Issue 3 pp. 469 - 472

published_at 2012-03

Creators : Okada Narihito Uchida Katsumi Miyoshi Seita Tadatomo Kazuyuki Publishers : Wiley-VCH

High-quality {20-21} GaN layers on patterned sapphire substrate with wideterrace

Applied Physics Letters Volume 99 Issue 24 pp. 242103 -

published_at 2011-12-12

Creators : Okada Narihito Oshita Hiroyasu Yamane Keisuke Tadatomo Kazuyuki Publishers : American Institute of Physics

Luminescence efficiency of InGaN-based quantum-well LEDs under selective excitation

Memoirs of the Faculty of Engineering, Yamaguchi University Volume 56 Issue 2 pp. 63 - 67

published_at 2006-03

Creators : Kuromoto Michiyoshi Kadokawa Kenichi Yamada Yoichi Taguchi Tsunemasa Tadotomo Kazuyuki Kudo Hiromitsu Okagawa Hiroaki Publishers : 山口大学工学部