Tadatomo Kazuyuki

Affiliate Master Yamaguchi University

Successful natural stress-induced separation of hydride vapor phase epitaxy-grown GaN layers on sapphire substrates

Journal of crystal growth Volume 358 Page 1-4

published_at 2012-11-01

Title

Successful natural stress-induced separation of hydride vapor phase epitaxy-grown GaN layers on sapphire substrates

Creators Yamane K.

Creators Ueno M.

Creators Furuya H.

Creators Okada N.

Creators Tadatomo K.

Creator Keywords

A1. substrates A3. hydride vapor phase epitaxy B1. nitrides B2. semiconducting gallium compounds

Languages eng

Resource Type journal article

Publishers North-Holland Elsevier Science

Date Issued 2012-11-01

File Version Not Applicable (or Unknown)

Access Rights metadata only access

Relations

[ISSN]0022-0248

[NCID]AA00696341

[NCID]AA11531784

info:doi/10.1016/j.jcrysgro.2012.07.038

[isVersionOf] [URI]http://www.sciencedirect.com/science/journal/00220248

Schools 大学院理工学研究科（工学）