山口県大学共同リポジトリ

Characterization of structural defects in semipolar {202^-1} GaN layers grown on {224^-3} patterned sapphire substrates

Japanese Journal of Applied Physics Volume 53 Issue 3 pp. 035502 -

published_at 2014-03

Creators : Yamane Keisuke Inagaki Takashi Hashimoto Yasuhiro Koyama Masakazu Okada Narihito Tadatomo Kazuyuki Publishers : Japan Society of Applied Physics

Epitaxial lateral overgrowth of thick semipolar {11$ \bar 2 $2} GaN by hydride vapor phase epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics Volume 11 Issue 3-4 pp. 549 - 552

published_at 2014-04

Creators : Hashimoto Yasuhiro Furuya Hiroshi Ueno Motohisa Yamane Keisuke Okada Narihito Tadatomo Kazuyuki Publishers : WILEY-VCH Verlag GmbH & Co. KGaA

Self-separation of large freestanding semipolar (11-22) GaN films using r-plane patterned sapphire substrates

Japanese Journal of Applied Physics Volume 52 Issue 8S pp. 08JA09 -

published_at 2013-08

Creators : Furuya Hiroshi Yamane Keisuke Okada Narihito Tadatomo Kazuyuki Publishers : Japan Society of Applied Physics through the Institute of Pure and Applied Physics

Successful natural stress-induced separation of hydride vapor phase epitaxy-grown GaN layers on sapphire substrates

Journal of crystal growth Volume 358 pp. 1 - 4

published_at 2012-11-01

Creators : Yamane K. Ueno M. Furuya H. Okada N. Tadatomo K. Publishers : North-Holland | Elsevier Science

Reduction in dislocation density of semipolar GaN layers on patterned sapphire substrates by hydride vapor phase epitaxy

Applied physics express Volume 5 Issue 9 pp. 095503 -

published_at 2012-09

Creators : Yamane Keisuke Ueno Motohisa Uchida Katsumi Furuya Hiroshi Okada Narihito Tadatomo Kazuyuki Publishers : Japan Society of Applied Physics through Institute of Pure and Applied Physics

Improved external quantum efficiency and controlled light distribution for light-emitting diodes with cone array composed of SiO _xN_y

Applied physics express Volume 5 Issue 9 pp. 092102 -

published_at 2012-09

Creators : Uchida Akimi Miyoshi Seita Yamane Keisuke Okada Narihito Tadatomo Kazuyuki Publishers : Japan Society of Applied Physics through Institute of Pure and Applied Physics

High-quality {20-21} GaN layers on patterned sapphire substrate with wideterrace

Applied Physics Letters Volume 99 Issue 24 pp. 242103 -

published_at 2011-12-12

Creators : Okada Narihito Oshita Hiroyasu Yamane Keisuke Tadatomo Kazuyuki Publishers : American Institute of Physics