Tadatomo Kazuyuki

Affiliate Master Yamaguchi University

Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on patterned sapphire substrates

Semiconductor science and technology Volume 27 Issue 2 Page 024003-

published_at 2012-02

Title

Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on patterned sapphire substrates

Creators Okada Narihito

Creators Tadatomo Kazuyuki

Languages eng

Resource Type journal article

Publishers Institute of Physics IOP Pub.

Date Issued 2012-02

File Version Not Applicable (or Unknown)

Access Rights metadata only access

Relations

[ISSN]0268-1242

[ISSN]1361-6641

[NCID]AA10695094

[NCID]AA12472727

info:doi/10.1088/0268-1242/27/2/024003

[isVersionOf] [URI]http://iopscience.iop.org/0268-1242

Schools 大学院理工学研究科（工学）