Tadatomo Kazuyuki

Affiliate Master Yamaguchi University

Characterization of structural defects in semipolar {202^-1} GaN layers grown on {224^-3} patterned sapphire substrates

Japanese Journal of Applied Physics Volume 53 Issue 3 Page 035502-

published_at 2014-03

Title

Characterization of structural defects in semipolar {202^-1} GaN layers grown on {224^-3} patterned sapphire substrates

Creators Yamane Keisuke

Creators Inagaki Takashi

Creators Hashimoto Yasuhiro

Creators Koyama Masakazu

Creators Okada Narihito

Creators Tadatomo Kazuyuki

Languages eng

Resource Type journal article

Publishers Japan Society of Applied Physics

Date Issued 2014-03

File Version Not Applicable (or Unknown)

Access Rights metadata only access

Relations

[ISSN]1347-4065

info:doi/10.7567/JJAP.53.035502

[isVersionOf] [URI]http://iopscience.iop.org/1347-4065/

Schools 大学院理工学研究科（工学）