Contents Menu

Tadatomo Kazuyuki

Affiliate Master Yamaguchi University

Characterization of structural defects in semipolar {202^-1} GaN layers grown on {224^-3} patterned sapphire substrates

Japanese Journal of Applied Physics Volume 53 Issue 3 Page 035502-
published_at 2014-03
Title
Characterization of structural defects in semipolar {202^-1} GaN layers grown on {224^-3} patterned sapphire substrates
Creators Yamane Keisuke
Creators Inagaki Takashi
Creators Hashimoto Yasuhiro
Creators Koyama Masakazu
Creators Okada Narihito
Creators Tadatomo Kazuyuki
Languages eng
Resource Type journal article
Publishers Japan Society of Applied Physics
Date Issued 2014-03
File Version Not Applicable (or Unknown)
Access Rights metadata only access
Relations
[ISSN]1347-4065
info:doi/10.7567/JJAP.53.035502
[isVersionOf] [URI]http://iopscience.iop.org/1347-4065/
Schools 大学院理工学研究科(工学)