Contents Menu

Tadatomo Kazuyuki

Affiliate Master Yamaguchi University

Reduction in dislocation density of semipolar GaN layers on patterned sapphire substrates by hydride vapor phase epitaxy

Applied physics express Volume 5 Issue 9 Page 095503-
published_at 2012-09
Title
Reduction in dislocation density of semipolar GaN layers on patterned sapphire substrates by hydride vapor phase epitaxy
Creators Yamane Keisuke
Creators Ueno Motohisa
Creators Uchida Katsumi
Creators Furuya Hiroshi
Creators Okada Narihito
Creators Tadatomo Kazuyuki
Languages eng
Resource Type journal article
Publishers Japan Society of Applied Physics through Institute of Pure and Applied Physics
Date Issued 2012-09
File Version Not Applicable (or Unknown)
Access Rights metadata only access
Relations
[ISSN]1882-0778
[NCID]AA12295133
info:doi/10.1143/APEX.5.095503
[isVersionOf] [URI]http://apex.jsap.jp/
Schools 大学院理工学研究科(工学)