Tadatomo Kazuyuki

Affiliate Master Yamaguchi University

Reduction in dislocation density of semipolar GaN layers on patterned sapphire substrates by hydride vapor phase epitaxy

Applied physics express Volume 5 Issue 9 Page 095503-

published_at 2012-09

Title

Reduction in dislocation density of semipolar GaN layers on patterned sapphire substrates by hydride vapor phase epitaxy

Creators Yamane Keisuke

Creators Ueno Motohisa

Creators Uchida Katsumi

Creators Furuya Hiroshi

Creators Okada Narihito

Creators Tadatomo Kazuyuki

Languages eng

Resource Type journal article

Publishers Japan Society of Applied Physics through Institute of Pure and Applied Physics

Date Issued 2012-09

File Version Not Applicable (or Unknown)

Access Rights metadata only access

Relations

[ISSN]1882-0778

[NCID]AA12295133

info:doi/10.1143/APEX.5.095503

[isVersionOf] [URI]http://apex.jsap.jp/

Schools 大学院理工学研究科（工学）