Tadatomo Kazuyuki

Affiliate Master Yamaguchi University

Growth of {11-22} GaN on shallowly etched r-plane patterned sapphire substrates

Physica status solidi. C, Current topics in solid state physics : PSS Volume 9 Issue 3-4 Page 568-571

published_at 2012-03

Title

Growth of {11-22} GaN on shallowly etched r-plane patterned sapphire substrates

Creators Furuya Hiroshi

Creators Okada Narihito

Creators Tadatomo Kazuyuki

Creator Keywords

GaN MOVPE semipolar dislocation SEM XRD cathodoluminescence

Languages eng

Resource Type journal article

Publishers Wiley-VCH Verlag GmbH & Co. KGaA

Date Issued 2012-03

File Version Not Applicable (or Unknown)

Access Rights metadata only access

Relations

[ISSN]1862-6351

[NCID]AA12375141

info:doi/10.1002/pssc.201100352

[isVersionOf] [URI]http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1610-1642a

Schools 大学院理工学研究科（工学）