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Tadatomo Kazuyuki

Affiliate Master Yamaguchi University

Growth of {11-22} GaN on shallowly etched r-plane patterned sapphire substrates

Physica status solidi. C, Current topics in solid state physics : PSS Volume 9 Issue 3-4 Page 568-571
published_at 2012-03
Title
Growth of {11-22} GaN on shallowly etched r-plane patterned sapphire substrates
Creators Furuya Hiroshi
Creators Okada Narihito
Creators Tadatomo Kazuyuki
Creator Keywords
GaN MOVPE semipolar dislocation SEM XRD cathodoluminescence
Languages eng
Resource Type journal article
Publishers Wiley-VCH Verlag GmbH & Co. KGaA
Date Issued 2012-03
File Version Not Applicable (or Unknown)
Access Rights metadata only access
Relations
[ISSN]1862-6351
[NCID]AA12375141
info:doi/10.1002/pssc.201100352
[isVersionOf] [URI]http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1610-1642a
Schools 大学院理工学研究科(工学)