Luminescence efficiency of InGaN-based quantum-well LEDs under selective excitation
Memoirs of the Faculty of Engineering, Yamaguchi University Volume 56 Issue 2
Page 63-67
published_at 2006-03
Title
InGaN系量子井戸LED構造の選択励起下における発行効率
Luminescence efficiency of InGaN-based quantum-well LEDs under selective excitation
Creators
Kuromoto Michiyoshi
Creators
Kadokawa Kenichi
Creators
Kudo Hiromitsu
Creators
Okagawa Hiroaki
Source Identifiers
Creator Keywords
In_xGa_<1-x>N-based LEDs
LEPS
photoluminescence
selective excitation
luminescence efficiency
Luminescence efficiency of InxGa1-xN-based light-emitting diodes (LEDs) has been studied by means of excitation-power-density- and temperature-dependent photoluminescence spectroscopy. The internal quantum efficiency (IQE) of LEDs was evaluated at various excitation photon energies using a wavelength-tunable dye laser system. The IQE obtained under selective excitation of InxGa1-xN active layers was approximately 1.5 times as high as that obtained under band-to-band excitation of GaN and AlGaN cladding layers.
Languages
jpn
Resource Type
departmental bulletin paper
Publishers
山口大学工学部
Date Issued
2006-03
File Version
Version of Record
Access Rights
open access
Relations
[isVersionOf]
[URI]http://memoirs.lib-e.yamaguchi-u.ac.jp/
Schools
工学部