Si Resonant Tunneling MOS Transistor (SRTMOST) for Next Generation

The characteristics of the Si resonant tunneling metal-oxide-semiconductor transistor (SRTMOST), which was proposed to realize a low-power and high-speed characteristics, were reviewed. From the discussion related to the suppression of the DT from the source to the drain under the gate-off condition, the excellent switching operation, the optimum off-set energy between the dielectric films at the both channel edges and Si and the feasibility of the three-valued logic circuit, it is shown that the SRTMOST would become the potential candidate of the substitution for the conventional metal-oxide-semiconductor field-effect transistor (MOSFET) in the next generation.

MOS

SRTMOST

dielectric film

resonant tunneling

logic circuit