Memoirs of the Faculty of Engineering, Yamaguchi University

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Memoirs of the Faculty of Engineering, Yamaguchi University Volume 50 Issue 2
published_at 2000-03

Relationship between Adsorption of Organic Carbon and Growth of Native Oxide on Si Wafer

Si表面への有機炭素原子吸着とネーティブオキサイド成長の関係
Aihara Daisuke
Matsuo Naoto
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Descriptions
To investigate the adsorption mechanism of organic carbon on Si surface, Si surface was examined by AFM and XPS, after dipping into the water which contains the organic carbon. The measurement deta of Ra indicates that the geometrically uneven surface such as the step or microfacet does not serve as the dominant adsorption site for the organic carbon. The mesured data of C_1s and the thickness of the native oxide strongly indicates that the adsorption of the organic carbon has the close relationship with the native oxide growth. For the adsorption mechanism of the organic carbon, new model which assumes the field-enhancement due to the Coulomb's force was discussed.
Creator Keywords
organic carbon
adsorption
microroughness of Si surface
native oxide
Coulomb's force
field-enhancement