Journal of East Asian studies

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Journal of East Asian studies Volume 16
published_at 2018-03

Biasing technique of MOSFET for an accurate and real-time-readout radiation sensor (2017年山口大学大学院東アジア研究科客員教員研究報告)

Biasing technique of MOSFET for an accurate and real-time-readout radiation sensor (2017年山口大学大学院東アジア研究科客員教員研究報告)
Chooyat Pongpisit
Lathai Adul
Sa-Ngiamsak Chiranut
fulltext
2.3 MB
D300016000011.pdf
Descriptions
This work reports a biasing technique of MOSFET for an accurate and real-time readout radiation measurement particularly during a radiation therapy given to cancer-related patients. The radiation beam energy induces a variation of threshold voltage (V_TH) of MOSFET during being exposed to gamma radiation. V_TH measurement of five different types of MOSFET were carried out in three methods by using OrCAD and MATLAB. The simulation results conclude that Method III is the most suitable one with high accuracy and ability to read out signal in real time process. Further use of this work is a prototype of a real- time readout radiation measurement using MOSFETs with low cost and high accuracy for patients diagnosed with cancer.
Creator Keywords
MOSFET
Biasing Technique
Current Mode
Radiation
Threshold Voltage
Readout