Biasing technique of MOSFET for an accurate and real-time-readout radiation sensor (2017年山口大学大学院東アジア研究科客員教員研究報告)
Journal of East Asian studies Volume 16
Page 175-183
published_at 2018-03
Title
Biasing technique of MOSFET for an accurate and real-time-readout radiation sensor (2017年山口大学大学院東アジア研究科客員教員研究報告)
Creators
Chooyat Pongpisit
Creators
Lathai Adul
Creators
Sa-Ngiamsak Chiranut
Source Identifiers
Creator Keywords
MOSFET
Biasing Technique
Current Mode
Radiation
Threshold Voltage
Readout
This work reports a biasing technique of MOSFET for an accurate and real-time readout radiation measurement particularly during a radiation therapy given to cancer-related patients. The radiation beam energy induces a variation of threshold voltage (V_TH) of MOSFET during being exposed to gamma radiation. V_TH measurement of five different types of MOSFET were carried out in three methods by using OrCAD and MATLAB. The simulation results conclude that Method III is the most suitable one with high accuracy and ability to read out signal in real time process. Further use of this work is a prototype of a real- time readout radiation measurement using MOSFETs with low cost and high accuracy for patients diagnosed with cancer.
Languages
eng
Resource Type
journal article
Publishers
山口大学大学院東アジア研究科
Date Issued
2018-03
File Version
Version of Record
Access Rights
open access
Relations
[ISSN]1347-9415
[NCID]AA11831154
Schools
教育学部