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keywordGaN
publish year
1970 - 1974 2 1995 - 1999 2 2000 - 2004 4 2010 - 2014 4 2015 - 2019 1
keyword
GaN 13 RF-MBE 5 semipolar 4 LT-GaN 2 MBE 2 MOVPE 2 cooling process 2 dislocation 2 initial growth conditions 2 light-emitting diode 2 localized exciton 2 nitridation 2 photoluminescence 2 temperature dependence 2 (11–22) 1 AlGaN 1 AlGaN multiple quantum wells 1 ELO 1 GaN single crystal 1 HVPE 1 In doping 1 InGaN 1 LED 1 Lifetime 1 MOCVD 1 SEM 1 Si-doping 1 Time-resolved photoluminescence 1 XRD 1 cathodoluminescence 1 crack 1 high power 1 high-temperature-grown AlN buffer layers 1 homoepitaxial growth 1 lattice polarity 1 r-plane patterned sapphire substrate 1 radiative recombination of free excitons 1 ray tracing 1 removal of the oxide 1 solid state lighting 1 surface morphology 1 surface pre-treatment 1 {11-22} 1
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departmental bulletin paper 8 journal article 5
school
工学部 8 大学院理工学研究科（工学） 5
Result 13 Items
Id (<span class="translation_missing" title="translation missing: en.view.desc">Desc</span>)
A high power InGaN-LED on an m-plane GaN substrate
Electronics and communications in Japan Volume 98 Issue 5
Creators : Yokogawa Toshiya | Oya Mitsuaki | Fujikane Masaki Publishers : 電気学会 Date Issued : 2015-08-01
Characterization of semipolar {11$ \bar 2 $2} light-emitting diodes using a hole blocking layer
Physica Status Solidi (C) Current Topics in Solid State Physics Volume 11 Issue 3-4
Creators : Nakao Kota | Haziq Muhammad | Okamura Yasumasa | Yamane Keisuke | Okada Narihito | Tadatomo Kazuyuki Publishers : WILEY-VCH Verlag GmbH & Co. KGaA Date Issued : 2014-04
Epitaxial lateral overgrowth of thick semipolar {11$ \bar 2 $2} GaN by hydride vapor phase epitaxy
Physica Status Solidi (C) Current Topics in Solid State Physics Volume 11 Issue 3-4
Creators : Hashimoto Yasuhiro | Furuya Hiroshi | Ueno Motohisa | Yamane Keisuke | Okada Narihito | Tadatomo Kazuyuki Publishers : WILEY-VCH Verlag GmbH & Co. KGaA Date Issued : 2014-04
Growth of {11-22} GaN on shallowly etched r-plane patterned sapphire substrates
Physica status solidi. C, Current topics in solid state physics : PSS Volume 9 Issue 3-4
Creators : Furuya Hiroshi | Okada Narihito | Tadatomo Kazuyuki Publishers : Wiley-VCH Verlag GmbH & Co. KGaA Date Issued : 2012-03
Green light-emitting diodes fabricated on semipolar (11-22) GaN on r-plane patterned sapphire substrate
Physica status solidi. A, Applications and materials science : PSS Volume 209 Issue 3
Creators : Okada Narihito | Uchida Katsumi | Miyoshi Seita | Tadatomo Kazuyuki Publishers : Wiley-VCH Date Issued : 2012-03
The Chemical Durability of V_2O_5-P_2O_5 System and V_2O_5-P_2O_5-BaO System Glasses (Continued Report)
Memoirs of the Faculty of Engineering, Yamaguchi University Volume 21 Issue 1
Creators : Yatabe Shunichi | Okada Toshio | Sugimoto Kojin | Mori Masami Publishers : 山口大学工学部 Date Issued : 1970
OPTICAL PROPERTIES OF GaN EPITAXIAL FILMS GROWN BY RF-MBE
Memoirs of the Faculty of Engineering, Yamaguchi University Volume 48 Issue 1
Creators : Fukuda Daisuke | Kawabe Akira | Sugita Taiichi | Okada Kiyohiko | Yamada Yoichi | Taguchi Tsunemasa Publishers : 山口大学工学部 Date Issued : 1997-10
Calculation of Mutual Inductance between a Circular Coil with a Rectangular Cross Section in front of a Conductor Plate and its Image Coil (2nd report)
Memoirs of the Faculty of Engineering, Yamaguchi University Volume 22 Issue 1
Creators : Toda Keiichi | Nagashima Hironobu Publishers : 山口大学工学部 Date Issued : 1971
Effects of initial growth conditions and cooling process on GaN epitaxial growth by RF-MBE
Memoirs of the Faculty of Engineering, Yamaguchi University Volume 49 Issue 2
Creators : Sugita Taiichi | Kubo Shuichi | Kawabe Akira | Kurai Satoshi | Yamada Yoichi | Taguchi Tsunemasa Publishers : 山口大学工学部 Date Issued : 1999
Polarity control of GaN epitaxial layers in MBE growth
Memoirs of the Faculty of Engineering, Yamaguchi University Volume 52 Issue 2
Creators : Kubo Shuichi | Tanabe Tomoyuki | Konishi Masafumi | Iwata Shiro | Saimei Tsunekazu | Kurai Satoshi | Taguchi Tsunemasa Publishers : 山口大学工学部 Date Issued : 2002-03
Homoepitaxial growth of III-nitride semiconductors on GaN single crystals by MBE
Memoirs of the Faculty of Engineering, Yamaguchi University Volume 52 Issue 2
Creators : Tanabe Tomoyuki | Watanabe Tadashi | Ono Motoi | Namba Yasunari | Kurai Satoshi | Taguchi Tsunemasa | Inoue Takayuki | Kurita Hiroshi Publishers : 山口大学工学部 Date Issued : 2002-03
Effects of Si doping on optical properties of GaN epitaxial layers
Memoirs of the Faculty of Engineering, Yamaguchi University Volume 50 Issue 2
Creators : Sasaki Chiharu | Yamashita Tatsuya | Yamada Yoichi | Taguchi Tsunemasa Publishers : 山口大学工学部 Date Issued : 2000-03
Pre-treatment of GaN substrate in Homoepitaxial growth by RF-MBE
Memoirs of the Faculty of Engineering, Yamaguchi University Volume 50 Issue 2
Creators : Kubo Shuichi | Okazaki Tomokazu | Manabe Shigeki | Kurai Satoshi | Taguchi Tsunemasa Publishers : 山口大学工学部 Date Issued : 2000-03
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Taguchi Tsunemasa 6 Kurai Satoshi 4 Okada Narihito 4 Tadatomo Kazuyuki 4 Yamada Yoichi 3 Yamane Keisuke 1 Yokogawa Toshiya 1
Related Journals
Memoirs of the Faculty of Engineering, Yamaguchi University Volume 52 Issue 2 2 Memoirs of the Faculty of Engineering, Yamaguchi University Volume 50 Issue 2 2 Memoirs of the Faculty of Engineering, Yamaguchi University Volume 49 Issue 2 1 Memoirs of the Faculty of Engineering, Yamaguchi University Volume 22 Issue 1 1 Memoirs of the Faculty of Engineering, Yamaguchi University Volume 48 Issue 1 1 Memoirs of the Faculty of Engineering, Yamaguchi University Volume 21 Issue 1 1
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