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Biasing technique of MOSFET for an accurate and real-time-readout radiation sensor (2017年山口大学大学院東アジア研究科客員教員研究報告)

Journal of East Asian studies Volume 16 Page 175-183
published_at 2018-03
D300016000011.pdf
[fulltext] 2.3 MB
Title
Biasing technique of MOSFET for an accurate and real-time-readout radiation sensor (2017年山口大学大学院東アジア研究科客員教員研究報告)
Creators Chooyat Pongpisit
Creators Lathai Adul
Creators Ge Qi-Wei
Creators Sa-Ngiamsak Chiranut
Source Identifiers
Creator Keywords
MOSFET Biasing Technique Current Mode Radiation Threshold Voltage Readout
This work reports a biasing technique of MOSFET for an accurate and real-time readout radiation measurement particularly during a radiation therapy given to cancer-related patients. The radiation beam energy induces a variation of threshold voltage (V_TH) of MOSFET during being exposed to gamma radiation. V_TH measurement of five different types of MOSFET were carried out in three methods by using OrCAD and MATLAB. The simulation results conclude that Method III is the most suitable one with high accuracy and ability to read out signal in real time process. Further use of this work is a prototype of a real- time readout radiation measurement using MOSFETs with low cost and high accuracy for patients diagnosed with cancer.
Languages eng
Resource Type journal article
Publishers 山口大学大学院東アジア研究科
Date Issued 2018-03
File Version Version of Record
Access Rights open access
Relations
[ISSN]1347-9415
[NCID]AA11831154
Schools 教育学部