Characterization of structural defects in semipolar {202^-1} GaN layers grown on {224^-3} patterned sapphire substrates
Japanese Journal of Applied Physics Volume 53 Issue 3
Page 035502-
published_at 2014-03
Title
Characterization of structural defects in semipolar {202^-1} GaN layers grown on {224^-3} patterned sapphire substrates
Creators
Inagaki Takashi
Creators
Hashimoto Yasuhiro
Creators
Koyama Masakazu
Languages
eng
Resource Type
journal article
Publishers
Japan Society of Applied Physics
Date Issued
2014-03
File Version
Not Applicable (or Unknown)
Access Rights
metadata only access
Relations
[ISSN]1347-4065
[isVersionOf]
[URI]http://iopscience.iop.org/1347-4065/
Schools
大学院理工学研究科（工学）