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Epitaxial lateral overgrowth of thick semipolar {11$ \bar 2 $2} GaN by hydride vapor phase epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics Volume 11 Issue 3-4 Page 549-552
published_at 2014-04
Title
Epitaxial lateral overgrowth of thick semipolar {11$ \bar 2 $2} GaN by hydride vapor phase epitaxy
Creators Hashimoto Yasuhiro
Creators Furuya Hiroshi
Creators Ueno Motohisa
Creators Yamane Keisuke
Creators Okada Narihito
Creators Tadatomo Kazuyuki
Creator Keywords
GaN HVPE semipolar ELO crack surface morphology dislocation
Languages eng
Resource Type journal article
Publishers WILEY-VCH Verlag GmbH & Co. KGaA
Date Issued 2014-04
File Version Not Applicable (or Unknown)
Access Rights metadata only access
Relations
[ISSN]1610-1642
info:doi/10.1002/pssc.201300483
Schools 大学院理工学研究科(工学)