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Successful natural stress-induced separation of hydride vapor phase epitaxy-grown GaN layers on sapphire substrates

Journal of crystal growth Volume 358 Page 1-4
published_at 2012-11-01
Title
Successful natural stress-induced separation of hydride vapor phase epitaxy-grown GaN layers on sapphire substrates
Creators Yamane K.
Creators Ueno M.
Creators Furuya H.
Creators Okada N.
Creators Tadatomo K.
Creator Keywords
A1. substrates A3. hydride vapor phase epitaxy B1. nitrides B2. semiconducting gallium compounds
Languages eng
Resource Type journal article
Publishers North-Holland Elsevier Science
Date Issued 2012-11-01
File Version Not Applicable (or Unknown)
Access Rights metadata only access
Relations
[ISSN]0022-0248
[NCID]AA00696341
[NCID]AA11531784
info:doi/10.1016/j.jcrysgro.2012.07.038
[isVersionOf] [URI]http://www.sciencedirect.com/science/journal/00220248
Schools 大学院理工学研究科(工学)