Successful natural stress-induced separation of hydride vapor phase epitaxy-grown GaN layers on sapphire substrates
Journal of crystal growth Volume 358
Page 1-4
published_at 2012-11-01
Title
Successful natural stress-induced separation of hydride vapor phase epitaxy-grown GaN layers on sapphire substrates
Creator Keywords
A1. substrates
A3. hydride vapor phase epitaxy
B1. nitrides
B2. semiconducting gallium compounds
Languages
eng
Resource Type
journal article
Publishers
North-Holland
Elsevier Science
Date Issued
2012-11-01
File Version
Not Applicable (or Unknown)
Access Rights
metadata only access
Relations
[ISSN]0022-0248
[NCID]AA00696341
[NCID]AA11531784
[isVersionOf]
[URI]http://www.sciencedirect.com/science/journal/00220248
Schools
大学院理工学研究科（工学）