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publish year2010 - 2014 keywordGaN resource typejournal article school大学院理工学研究科(工学)
Result 4 Items
Id (<span class="translation_missing" title="translation missing: en.view.desc">Desc</span>)
Characterization of semipolar {11$ \bar 2 $2} light-emitting diodes using a hole blocking layer
Physica Status Solidi (C) Current Topics in Solid State Physics Volume 11 Issue 3-4
Creators : Nakao Kota | Haziq Muhammad | Okamura Yasumasa | Yamane Keisuke | Okada Narihito | Tadatomo Kazuyuki Publishers : WILEY-VCH Verlag GmbH & Co. KGaA Date Issued : 2014-04
Epitaxial lateral overgrowth of thick semipolar {11$ \bar 2 $2} GaN by hydride vapor phase epitaxy
Physica Status Solidi (C) Current Topics in Solid State Physics Volume 11 Issue 3-4
Creators : Hashimoto Yasuhiro | Furuya Hiroshi | Ueno Motohisa | Yamane Keisuke | Okada Narihito | Tadatomo Kazuyuki Publishers : WILEY-VCH Verlag GmbH & Co. KGaA Date Issued : 2014-04
Growth of {11-22} GaN on shallowly etched r-plane patterned sapphire substrates
Physica status solidi. C, Current topics in solid state physics : PSS Volume 9 Issue 3-4
Creators : Furuya Hiroshi | Okada Narihito | Tadatomo Kazuyuki Publishers : Wiley-VCH Verlag GmbH & Co. KGaA Date Issued : 2012-03
Green light-emitting diodes fabricated on semipolar (11-22) GaN on r-plane patterned sapphire substrate
Physica status solidi. A, Applications and materials science : PSS Volume 209 Issue 3
Creators : Okada Narihito | Uchida Katsumi | Miyoshi Seita | Tadatomo Kazuyuki Publishers : Wiley-VCH Date Issued : 2012-03