コンテンツメニュー
publish year2000 - 2004 keywordGaN
Result 4 Items
Id (<span class="translation_missing" title="translation missing: en.view.desc">Desc</span>)
Polarity control of GaN epitaxial layers in MBE growth
Memoirs of the Faculty of Engineering, Yamaguchi University Volume 52 Issue 2
Creators : Kubo Shuichi | Tanabe Tomoyuki | Konishi Masafumi | Iwata Shiro | Saimei Tsunekazu | Kurai Satoshi | Taguchi Tsunemasa Publishers : 山口大学工学部 Date Issued : 2002-03
Homoepitaxial growth of III-nitride semiconductors on GaN single crystals by MBE
Memoirs of the Faculty of Engineering, Yamaguchi University Volume 52 Issue 2
Creators : Tanabe Tomoyuki | Watanabe Tadashi | Ono Motoi | Namba Yasunari | Kurai Satoshi | Taguchi Tsunemasa | Inoue Takayuki | Kurita Hiroshi Publishers : 山口大学工学部 Date Issued : 2002-03
Effects of Si doping on optical properties of GaN epitaxial layers
Memoirs of the Faculty of Engineering, Yamaguchi University Volume 50 Issue 2
Creators : Sasaki Chiharu | Yamashita Tatsuya | Yamada Yoichi | Taguchi Tsunemasa Publishers : 山口大学工学部 Date Issued : 2000-03
Pre-treatment of GaN substrate in Homoepitaxial growth by RF-MBE
Memoirs of the Faculty of Engineering, Yamaguchi University Volume 50 Issue 2
Creators : Kubo Shuichi | Okazaki Tomokazu | Manabe Shigeki | Kurai Satoshi | Taguchi Tsunemasa Publishers : 山口大学工学部 Date Issued : 2000-03