Polarity control of GaN epitaxial layers in MBE growth

MBE 成長におけるGaN 薄膜の極性制御

Polarity control of GaN epitaxial layers in MBE growth

Creators Kubo Shuichi

Creators Tanabe Tomoyuki

Creators Konishi Masafumi

Creators Iwata Shiro

Creators Saimei Tsunekazu

Creators Kurai Satoshi

Creators Taguchi Tsunemasa

The mechanism of polarity control in molecular beam epitaxy (MBE) growth of GaN epitaxial layers has been investigated using N-face of bulk GaN crystal. The (6×6) reflection high-energy electron diffraction (RHEED) reconstruction patterns were observed from GaN epitaxial layers on high-temperature-grown buffer layers over N-face bulk GaN after cooling. On the other hand, the (2×2) RHEED reconstruction patterns were observed from GaN epitaxial layers on In-doped GaN epitaxial layers over N-face bulk GaN after cooling. These results suggest that N-polarity can be reversed to Ga-polarity by In doping but not by the deposition of high-temperature-grown buffer layers.

[ISSN]1345-5583

[NCID]AA11422756

[isVersionOf] [URI]http://memoirs.lib-e.yamaguchi-u.ac.jp/