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Luminescence efficiency of InGaN-based quantum-well LEDs under selective excitation

Memoirs of the Faculty of Engineering, Yamaguchi University Volume 56 Issue 2 Page 63-67
published_at 2006-03
A040056000201.pdf
[fulltext] 305 KB
Title
InGaN系量子井戸LED構造の選択励起下における発行効率
Luminescence efficiency of InGaN-based quantum-well LEDs under selective excitation
Creators Kuromoto Michiyoshi
Creators Kadokawa Kenichi
Creators Yamada Yoichi
Creators Taguchi Tsunemasa
Creators Tadotomo Kazuyuki
Creators Kudo Hiromitsu
Creators Okagawa Hiroaki
Source Identifiers
Creator Keywords
In_xGa_<1-x>N-based LEDs LEPS photoluminescence selective excitation luminescence efficiency
Luminescence efficiency of InxGa1-xN-based light-emitting diodes (LEDs) has been studied by means of excitation-power-density- and temperature-dependent photoluminescence spectroscopy. The internal quantum efficiency (IQE) of LEDs was evaluated at various excitation photon energies using a wavelength-tunable dye laser system. The IQE obtained under selective excitation of InxGa1-xN active layers was approximately 1.5 times as high as that obtained under band-to-band excitation of GaN and AlGaN cladding layers.
Languages jpn
Resource Type departmental bulletin paper
Publishers 山口大学工学部
Date Issued 2006-03
File Version Version of Record
Access Rights open access
Relations
[isVersionOf] [URI]http://memoirs.lib-e.yamaguchi-u.ac.jp/
Schools 工学部