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Relationship between Adsorption of Organic Carbon and Growth of Native Oxide on Si Wafer

Memoirs of the Faculty of Engineering, Yamaguchi University Volume 50 Issue 2 Page 129-136
published_at 2000-03
A030050000206.pdf
[fulltext] 68.8 KB
Title
Si表面への有機炭素原子吸着とネーティブオキサイド成長の関係
Relationship between Adsorption of Organic Carbon and Growth of Native Oxide on Si Wafer
Creators Kawamoto Naoya
Creators Aihara Daisuke
Creators Matsuo Naoto
Source Identifiers
Creator Keywords
organic carbon adsorption microroughness of Si surface native oxide Coulomb's force field-enhancement
To investigate the adsorption mechanism of organic carbon on Si surface, Si surface was examined by AFM and XPS, after dipping into the water which contains the organic carbon. The measurement deta of Ra indicates that the geometrically uneven surface such as the step or microfacet does not serve as the dominant adsorption site for the organic carbon. The mesured data of C_1s and the thickness of the native oxide strongly indicates that the adsorption of the organic carbon has the close relationship with the native oxide growth. For the adsorption mechanism of the organic carbon, new model which assumes the field-enhancement due to the Coulomb's force was discussed.
Subjects
工学 ( Other)
Languages jpn
Resource Type departmental bulletin paper
Publishers 山口大学工学部
Date Issued 2000-03
File Version Version of Record
Access Rights open access
Relations
[ISSN]1345-5583
[NCID]AA11422756
[isVersionOf] [URI]http://memoirs.lib-e.yamaguchi-u.ac.jp/
Schools 工学部