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Relationship between Adsorption of Organic Carbon and Growth of Native Oxide on Si Wafer

Memoirs of the Faculty of Engineering, Yamaguchi University Volume 50 Issue 2 Page 129-136

published_at 2000-03

A030050000206.pdf

[fulltext] 68.8 KB

Title

Si表面への有機炭素原子吸着とネーティブオキサイド成長の関係

Relationship between Adsorption of Organic Carbon and Growth of Native Oxide on Si Wafer

Creators Kawamoto Naoya

Creators Aihara Daisuke

Creators Matsuo Naoto

Source Identifiers

Creator Keywords

organic carbon adsorption microroughness of Si surface native oxide Coulomb's force field-enhancement

To investigate the adsorption mechanism of organic carbon on Si surface, Si surface was examined by AFM and XPS, after dipping into the water which contains the organic carbon. The measurement deta of Ra indicates that the geometrically uneven surface such as the step or microfacet does not serve as the dominant adsorption site for the organic carbon. The mesured data of C_1s and the thickness of the native oxide strongly indicates that the adsorption of the organic carbon has the close relationship with the native oxide growth. For the adsorption mechanism of the organic carbon, new model which assumes the field-enhancement due to the Coulomb's force was discussed.

Subjects

工学 ( Other)

Languages jpn

Resource Type departmental bulletin paper

Publishers 山口大学工学部

Date Issued 2000-03

File Version Version of Record

Access Rights open access

Relations

[ISSN]1345-5583

[NCID]AA11422756

[isVersionOf] [URI]http://memoirs.lib-e.yamaguchi-u.ac.jp/

Schools 工学部