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Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on patterned sapphire substrates

Semiconductor science and technology Volume 27 Issue 2 Page 024003-
published_at 2012-02
Title
Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on patterned sapphire substrates
Creators Okada Narihito
Creators Tadatomo Kazuyuki
Languages eng
Resource Type journal article
Publishers Institute of Physics IOP Pub.
Date Issued 2012-02
File Version Not Applicable (or Unknown)
Access Rights metadata only access
Relations
[ISSN]0268-1242
[ISSN]1361-6641
[NCID]AA10695094
[NCID]AA12472727
info:doi/10.1088/0268-1242/27/2/024003
[isVersionOf] [URI]http://iopscience.iop.org/0268-1242
Schools 大学院理工学研究科(工学)