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Growth mechanism of unpolar nitride semiconductor on maskless patterned sapphire substrates

日本結晶成長学会誌 Volume 38 Issue 4 Page 231-240
published_at 2012-01
Title
マスクレスサファイア加工基板上非極性面窒化物半導体の結晶成長メカニズム(次世代素子のための窒化物結晶成長新機軸)
Growth mechanism of unpolar nitride semiconductor on maskless patterned sapphire substrates
Creators 岡田 成仁
Creators 只友 一行
Languages jpn
Resource Type journal article
Publishers 日本結晶成長学会
Date Issued 2012-01
File Version Not Applicable (or Unknown)
Access Rights metadata only access
Relations
[ISSN]0385-6275
[NCID]AN00188386
[NCID]AA12109272
[isVersionOf] [URI]http://ci.nii.ac.jp/vol_issue/nels/AN00188386_jp.html
Schools 大学院理工学研究科(工学)