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Anodization of Si using ECR Plasma

Memoirs of the Faculty of Engineering, Yamaguchi University Volume 41 Issue 1 Page 103-107
published_at 1990-10
KJ00000156825.pdf
[fulltext] 324 KB
Title
ECR プラズマによる Si の陽極酸化
Anodization of Si using ECR Plasma
Creators Morimoto Yasuo
Creators Ishikawa Kazuo
Creators Nagao Keigo
Creators Koyanagi Tsuyoshi
Creators Matsubara Kakuei
Source Identifiers
The plasma anodization was carried out in electron cyclotron resonance (ECR) microwave plasma. The unifrom oxide layers with the same oxygen concentration as SiO_2 were obtained at low temperatures. The growth of the oxide layers was studied with relation to the electron temperature, electron density, and optical emission intensities from the activated particles in the ECR plasma, which were measured by a double probe method and an optical emission spectroscopy analysis, respectively. The result suggests that the generation of O^* atomic radicals plays an important role of the growth of oxide layers.
Subjects
電気電子工学 ( Other)
Languages jpn
Resource Type departmental bulletin paper
Publishers 山口大学工学部
Date Issued 1990-10
File Version Version of Record
Access Rights open access
Relations
[ISSN]0372-7661
[NCID]AN00244228
Schools 工学部