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InSb Thin-Film Transistor

Memoirs of the Faculty of Engineering, Yamaguchi University Volume 22 Issue 2 Page 173-178
published_at 1971
KJ00000155900.pdf
[fulltext] 442 KB
Title
InSb薄膜トランジスタ
InSb Thin-Film Transistor
Creators Sasaki Jiro
Creators Watanabe Noriyuki
Source Identifiers
In this paper a new model, which is valid in both enhancement and depletion mode, is developed for the mechanism of the thin-film transistor. In the model it is assumed that the structure of the evaporated InSb film has Petritz' barrier-model and this barrier-model is valid for the conduction mechanism in the transistor. According to this barrier-model the semiconductor film consists of high and low-resistance region. The new model can explain the discrepancy mentioned frequently between the Hall mobility and field-effect mobility. The new model is verified by measurements on depletion-type InSb thin-film transistor.
Subjects
電気電子工学 ( Other)
Languages jpn
Resource Type departmental bulletin paper
Publishers 山口大学工学部
Date Issued 1971
File Version Version of Record
Access Rights open access
Relations
[ISSN]0372-7661
[NCID]AN00244228
Schools 工学部