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Si Resonant Tunneling MOS Transistor (SRTMOST) for Next Generation

Memoirs of the Faculty of Engineering, Yamaguchi University Volume 53 Issue 2 Page 123-131
published_at 2003-03
A030053000203.pdf
[fulltext] 431 KB
Title
次世代素子、Si 共鳴トンネルMOS トランジスタの提案及び理論検討
Si Resonant Tunneling MOS Transistor (SRTMOST) for Next Generation
Creators Kihara Hiroyuki
Creators Yamamoto Akinori
Creators Matsuo Naoto
Source Identifiers
Creator Keywords
MOS SRTMOST dielectric film resonant tunneling logic circuit
The characteristics of the Si resonant tunneling metal-oxide-semiconductor transistor (SRTMOST), which was proposed to realize a low-power and high-speed characteristics, were reviewed. From the discussion related to the suppression of the DT from the source to the drain under the gate-off condition, the excellent switching operation, the optimum off-set energy between the dielectric films at the both channel edges and Si and the feasibility of the three-valued logic circuit, it is shown that the SRTMOST would become the potential candidate of the substitution for the conventional metal-oxide-semiconductor field-effect transistor (MOSFET) in the next generation.
Subjects
工学 ( Other)
Languages jpn
Resource Type departmental bulletin paper
Publishers 山口大学工学部
Date Issued 2003-03
File Version Version of Record
Access Rights open access
Relations
[ISSN]1345-5583
[NCID]AA11422756
[isVersionOf] [URI]http://memoirs.lib-e.yamaguchi-u.ac.jp/
Schools 工学部