Si Resonant Tunneling MOS Transistor (SRTMOST) for Next Generation

次世代素子、Si 共鳴トンネルMOS トランジスタの提案及び理論検討

Si Resonant Tunneling MOS Transistor (SRTMOST) for Next Generation

Creators Kihara Hiroyuki

Creators Yamamoto Akinori

Creators Matsuo Naoto

The characteristics of the Si resonant tunneling metal-oxide-semiconductor transistor (SRTMOST), which was proposed to realize a low-power and high-speed characteristics, were reviewed. From the discussion related to the suppression of the DT from the source to the drain under the gate-off condition, the excellent switching operation, the optimum off-set energy between the dielectric films at the both channel edges and Si and the feasibility of the three-valued logic circuit, it is shown that the SRTMOST would become the potential candidate of the substitution for the conventional metal-oxide-semiconductor field-effect transistor (MOSFET) in the next generation.

[ISSN]1345-5583

[NCID]AA11422756

[isVersionOf] [URI]http://memoirs.lib-e.yamaguchi-u.ac.jp/