Epitaxy Part B. Epitaxial growth of GaN on Ppatterned sapphire substrates

Topics in applied physics Volume 126 Page 59-81

published_at 2013

Title

Creators Tadatomo Kazuyuki

Languages eng

Resource Type journal article

Publishers Springer

Date Issued 2013

Access Rights metadata only access

Relations

[ISSN]0303-4216

[NCID]AA00864151

info:doi/10.1007/978-94-007-5863-6_4

[isVersionOf] [URI]http://link.springer.com/bookseries/560

Schools 大学院理工学研究科（工学）