Kawamoto Naoya
Affiliate Master
Yamaguchi University
Study of Transition Stage of Crystal Growth for the poly-Si Prepared by Excimer Laser Annealing Method
Memoirs of the Faculty of Engineering, Yamaguchi University Volume 51 Issue 2
Page 101-104
published_at 2001-03
Title
エキシマ・レーザ・アニール法により形成されたpoly-Si 薄膜結晶成長の遷移領域に関する検討
Study of Transition Stage of Crystal Growth for the poly-Si Prepared by Excimer Laser Annealing Method
Creators
Abe Hisashi
Creators
Taguchi Ryouhei
Creators
Matsuo Naoto
Creators
Nouda Tomoyuki
Creators
Hamada Hiroki
Source Identifiers
Creator Keywords
ELA
SPC
SCL
poly-Si grains
disk-shaped grain
crystal growth mechanism
The crystal growth mechanisum for the poly-Si prepared by excimer laser annealing method is studied from a viewpoint of the transition stage between the solid phase crystallization for the low energy density and the nucleation and growth from the super cooled liquid for the high energy density. The preferred orientation, the crystallinity and the surface morphology are measured and the characteristics of the disk-shaped grain are clarified. Furthermore, the total mechanism of the recrystallized poly-Si is discussed.
Languages
jpn
Resource Type
departmental bulletin paper
Publishers
山口大学工学部
Date Issued
2001-03
File Version
Version of Record
Access Rights
open access
Relations
[ISSN]1345-5583
[NCID]AA11422756
[isVersionOf]
[URI]http://memoirs.lib-e.yamaguchi-u.ac.jp/
Schools
工学部