InGaN系量子井戸LED構造の選択励起下における発行効率

Luminescence efficiency of InGaN-based quantum-well LEDs under selective excitation

Creators Kuromoto Michiyoshi

Creators Kadokawa Kenichi

Creators Yamada Yoichi

Creators Taguchi Tsunemasa

Creators Tadotomo Kazuyuki

Creators Kudo Hiromitsu

Creators Okagawa Hiroaki

Luminescence efficiency of InxGa1-xN-based light-emitting diodes (LEDs) has been studied by means of excitation-power-density- and temperature-dependent photoluminescence spectroscopy. The internal quantum efficiency (IQE) of LEDs was evaluated at various excitation photon energies using a wavelength-tunable dye laser system. The IQE obtained under selective excitation of InxGa1-xN active layers was approximately 1.5 times as high as that obtained under band-to-band excitation of GaN and AlGaN cladding layers.

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