MBE 法によるGaN 単結晶基板上へのⅢ族窒化物半導体のホモエピタキシャル成長

Homoepitaxial growth of III-nitride semiconductors on GaN single crystals by MBE

Creators Tanabe Tomoyuki

Creators Watanabe Tadashi

Creators Ono Motoi

Creators Namba Yasunari

Creators Kurai Satoshi

Creators Taguchi Tsunemasa

Creators Inoue Takayuki

Creators Kurita Hiroshi

GaN, AlGaN epilayers and GaN/Al0.15Ga0.85N multiple quantum wells (MQWs) were grown on GaN single crystals by molecular beam epitaxy. The crystalline quality of the GaN and AlGaN epilayers was investigated by X-ray diffraction and photoluminescence spectroscopy. The crystalline quality and surface flatness of epilayers on GaN(0001) single crystals were superior to those on GaN ) 1 000 ( single crystals. The homoepitaxial GaN layers on GaN ) 1 000 ( single crystals always showed higher residual carrier concentration and have a bad influence on intentional doping of Mg(p-dopant) and Si(n-dopant). Low temperature photoluminescence spectra of the GaN/Al0.15Ga0.85N MQW exhibited intense QW-related emission peaks. The variation of QW transition energy versus the well thickness (from 2 ML to 18 ML:1 ML=2.59Å) indicates the presence of built-in electric field in the wurtzite GaN/ Al0.15Ga0.85N heterostructure.

[ISSN]1345-5583

[NCID]AA11422756

[isVersionOf] [URI]http://memoirs.lib-e.yamaguchi-u.ac.jp/