Polarity control of GaN epitaxial layers in MBE growth
Memoirs of the Faculty of Engineering, Yamaguchi University Volume 52 Issue 2
Page 221-224
published_at 2002-03
Title
MBE 成長におけるGaN 薄膜の極性制御
Polarity control of GaN epitaxial layers in MBE growth
Creators
Kubo Shuichi
Creators
Tanabe Tomoyuki
Creators
Konishi Masafumi
Creators
Iwata Shiro
Creators
Saimei Tsunekazu
Source Identifiers
Creator Keywords
GaN
MBE
lattice polarity
high-temperature-grown AlN buffer layers
In doping
The mechanism of polarity control in molecular beam epitaxy (MBE) growth of GaN epitaxial layers has been investigated using N-face of bulk GaN crystal. The (6×6) reflection high-energy electron diffraction (RHEED) reconstruction patterns were observed from GaN epitaxial layers on high-temperature-grown buffer layers over N-face bulk GaN after cooling. On the other hand, the (2×2) RHEED reconstruction patterns were observed from GaN epitaxial layers on In-doped GaN epitaxial layers over N-face bulk GaN after cooling. These results suggest that N-polarity can be reversed to Ga-polarity by In doping but not by the deposition of high-temperature-grown buffer layers.
Languages
jpn
Resource Type
departmental bulletin paper
Publishers
山口大学工学部
Date Issued
2002-03
File Version
Version of Record
Access Rights
open access
Relations
[ISSN]1345-5583
[NCID]AA11422756
[isVersionOf]
[URI]http://memoirs.lib-e.yamaguchi-u.ac.jp/
Schools
工学部