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Homoepitaxial growth of III-nitride semiconductors on GaN single crystals by MBE

Memoirs of the Faculty of Engineering, Yamaguchi University Volume 52 Issue 2 Page 215-220
published_at 2002-03
A030052000212.pdf
[fulltext] 697 KB
Title
MBE 法によるGaN 単結晶基板上へのⅢ族窒化物半導体のホモエピタキシャル成長
Homoepitaxial growth of III-nitride semiconductors on GaN single crystals by MBE
Creators Tanabe Tomoyuki
Creators Watanabe Tadashi
Creators Ono Motoi
Creators Namba Yasunari
Creators Kurai Satoshi
Creators Taguchi Tsunemasa
Creators Inoue Takayuki
Creators Kurita Hiroshi
Source Identifiers
Creator Keywords
MBE GaN AlGaN AlGaN multiple quantum wells GaN single crystal
GaN, AlGaN epilayers and GaN/Al0.15Ga0.85N multiple quantum wells (MQWs) were grown on GaN single crystals by molecular beam epitaxy. The crystalline quality of the GaN and AlGaN epilayers was investigated by X-ray diffraction and photoluminescence spectroscopy. The crystalline quality and surface flatness of epilayers on GaN(0001) single crystals were superior to those on GaN ) 1 000 ( single crystals. The homoepitaxial GaN layers on GaN ) 1 000 ( single crystals always showed higher residual carrier concentration and have a bad influence on intentional doping of Mg(p-dopant) and Si(n-dopant). Low temperature photoluminescence spectra of the GaN/Al0.15Ga0.85N MQW exhibited intense QW-related emission peaks. The variation of QW transition energy versus the well thickness (from 2 ML to 18 ML:1 ML=2.59Å) indicates the presence of built-in electric field in the wurtzite GaN/ Al0.15Ga0.85N heterostructure.
Subjects
工学 ( Other)
Languages jpn
Resource Type departmental bulletin paper
Publishers 山口大学工学部
Date Issued 2002-03
File Version Version of Record
Access Rights open access
Relations
[ISSN]1345-5583
[NCID]AA11422756
[isVersionOf] [URI]http://memoirs.lib-e.yamaguchi-u.ac.jp/
Schools 工学部