Homoepitaxial growth of III-nitride semiconductors on GaN single crystals by MBE
Memoirs of the Faculty of Engineering, Yamaguchi University Volume 52 Issue 2
Page 215-220
published_at 2002-03
Title
MBE 法によるGaN 単結晶基板上へのⅢ族窒化物半導体のホモエピタキシャル成長
Homoepitaxial growth of III-nitride semiconductors on GaN single crystals by MBE
Creators
Tanabe Tomoyuki
Creators
Watanabe Tadashi
Creators
Ono Motoi
Creators
Namba Yasunari
Creators
Inoue Takayuki
Creators
Kurita Hiroshi
Source Identifiers
Creator Keywords
MBE
GaN
AlGaN
AlGaN multiple quantum wells
GaN single crystal
GaN, AlGaN epilayers and GaN/Al0.15Ga0.85N multiple quantum wells (MQWs) were grown on GaN single crystals by molecular beam epitaxy. The crystalline quality of the GaN and AlGaN epilayers was investigated by X-ray diffraction and photoluminescence spectroscopy. The crystalline quality and surface flatness of epilayers on GaN(0001) single crystals were superior to those on GaN ) 1 000 ( single crystals. The homoepitaxial GaN layers on GaN ) 1 000 ( single crystals always showed higher residual carrier concentration and have a bad influence on intentional doping of Mg(p-dopant) and Si(n-dopant). Low temperature photoluminescence spectra of the GaN/Al0.15Ga0.85N MQW exhibited intense QW-related emission peaks. The variation of QW transition energy versus the well thickness (from 2 ML to 18 ML:1 ML=2.59Å) indicates the presence of built-in electric field in the wurtzite GaN/ Al0.15Ga0.85N heterostructure.
Languages
jpn
Resource Type
departmental bulletin paper
Publishers
山口大学工学部
Date Issued
2002-03
File Version
Version of Record
Access Rights
open access
Relations
[ISSN]1345-5583
[NCID]AA11422756
[isVersionOf]
[URI]http://memoirs.lib-e.yamaguchi-u.ac.jp/
Schools
工学部