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Study of Transition Stage of Crystal Growth for the poly-Si Prepared by Excimer Laser Annealing Method

Memoirs of the Faculty of Engineering, Yamaguchi University Volume 51 Issue 2 Page 101-104
published_at 2001-03
A030051000202.pdf
[fulltext] 403 KB
Title
エキシマ・レーザ・アニール法により形成されたpoly-Si 薄膜結晶成長の遷移領域に関する検討
Study of Transition Stage of Crystal Growth for the poly-Si Prepared by Excimer Laser Annealing Method
Creators Kawamoto Naoya
Creators Abe Hisashi
Creators Taguchi Ryouhei
Creators Matsuo Naoto
Creators Nouda Tomoyuki
Creators Hamada Hiroki
Source Identifiers
Creator Keywords
ELA SPC SCL poly-Si grains disk-shaped grain crystal growth mechanism
The crystal growth mechanisum for the poly-Si prepared by excimer laser annealing method is studied from a viewpoint of the transition stage between the solid phase crystallization for the low energy density and the nucleation and growth from the super cooled liquid for the high energy density. The preferred orientation, the crystallinity and the surface morphology are measured and the characteristics of the disk-shaped grain are clarified. Furthermore, the total mechanism of the recrystallized poly-Si is discussed.
Subjects
工学 ( Other)
Languages jpn
Resource Type departmental bulletin paper
Publishers 山口大学工学部
Date Issued 2001-03
File Version Version of Record
Access Rights open access
Relations
[ISSN]1345-5583
[NCID]AA11422756
[isVersionOf] [URI]http://memoirs.lib-e.yamaguchi-u.ac.jp/
Schools 工学部