Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on patterned sapphire substrates
Semiconductor science and technology Volume 27 Issue 2
Page 024003-
published_at 2012-02
Title
Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on patterned sapphire substrates
Languages
eng
Resource Type
journal article
Publishers
Institute of Physics
IOP Pub.
Date Issued
2012-02
File Version
Not Applicable (or Unknown)
Access Rights
metadata only access
Relations
[ISSN]0268-1242
[ISSN]1361-6641
[NCID]AA10695094
[NCID]AA12472727
[isVersionOf]
[URI]http://iopscience.iop.org/0268-1242
Schools
大学院理工学研究科（工学）