Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on patterned sapphire substrates

Semiconductor science and technology Volume 27 Issue 2 Page 024003-

published_at 2012-02

Title

Creators Okada Narihito

Creators Tadatomo Kazuyuki

Languages eng

Resource Type journal article

Publishers Institute of Physics IOP Pub.

Date Issued 2012-02

File Version Not Applicable (or Unknown)

Access Rights metadata only access

Relations

[ISSN]0268-1242

[ISSN]1361-6641

[NCID]AA10695094

[NCID]AA12472727

info:doi/10.1088/0268-1242/27/2/024003

[isVersionOf] [URI]http://iopscience.iop.org/0268-1242

Schools 大学院理工学研究科（工学）