Growth of {11-22} GaN on shallowly etched r-plane patterned sapphire substrates
Physica status solidi. C, Current topics in solid state physics : PSS Volume 9 Issue 3-4
Page 568-571
published_at 2012-03
Title
Growth of {11-22} GaN on shallowly etched r-plane patterned sapphire substrates
Creator Keywords
GaN
MOVPE
semipolar
dislocation
SEM
XRD
cathodoluminescence
Languages
eng
Resource Type
journal article
Publishers
Wiley-VCH Verlag GmbH & Co. KGaA
Date Issued
2012-03
File Version
Not Applicable (or Unknown)
Access Rights
metadata only access
Relations
[ISSN]1862-6351
[NCID]AA12375141
[isVersionOf]
[URI]http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1610-1642a
Schools
大学院理工学研究科（工学）