Growth mechanism of unpolar nitride semiconductor on maskless patterned sapphire substrates

日本結晶成長学会誌 Volume 38 Issue 4 Page 231-240

published_at 2012-01

Title

マスクレスサファイア加工基板上非極性面窒化物半導体の結晶成長メカニズム(次世代素子のための窒化物結晶成長新機軸)

Creators 岡田成仁

Creators 只友一行

Languages jpn

Resource Type journal article

Publishers 日本結晶成長学会

Date Issued 2012-01

File Version Not Applicable (or Unknown)

Access Rights metadata only access

Relations

[ISSN]0385-6275

[NCID]AN00188386

[NCID]AA12109272

[isVersionOf] [URI]http://ci.nii.ac.jp/vol_issue/nels/AN00188386_jp.html

Schools 大学院理工学研究科（工学）