Crystal Growth Mode of Poly-Si Prepared by ELA : Relationship between the Grian Morphology and Hydrogens
Memoirs of the Faculty of Engineering, Yamaguchi University Volume 53 Issue 1
Page 15-21
published_at 2002-10
Title
ELA により形成された poly-Si 結晶成長様式 : グレイン形状と水素の関係
Crystal Growth Mode of Poly-Si Prepared by ELA : Relationship between the Grian Morphology and Hydrogens
Creators
Matsuo Naoto
Source Identifiers
Creator Keywords
excimer laser annealing
Sin substrate
poly-Si
hydogens
burst
crystal growth mechanism
We investigate the characteristic of the poly-Si film prepared by the excimer laser annealing (ELA) of a-Si deposited using plasma enhanced chemical vapor deposition (PECVD) method on SiO2 / SiN / glass substrate (SiN substrate). Compared with the poly-Si film prepared by ELA of a-Si deposited by low-pressure chemical vapor deposition (LPCVD) on the quartz substrate, the Raman intensity of the poly-Si film on the SiN substrate is larger than that on the quartz substrate. The stress of the poly-Si film on the SiN substrate is smaller than that on the quartz substrate. The average grin size of the poly-Si film on the SiN substrate is approximately 70nm, and the disk-shaped grain, which is observed for the poly-Si film on the quartz substrate, is not observed. The avarage roughness (Ra) of poly-Si surface on the SiN substrate is larger than that on the quartz substrate. These phenomena are due to the difference of the crystal growth mechanims of the poly-Si film between on the SiN substrate and on the quartz substrate. We discuss these mechanisms from a viewpoint of the hydrogens included in the film and the origin of them.
Languages
jpn
Resource Type
departmental bulletin paper
Publishers
山口大学工学部
Date Issued
2002-10
File Version
Version of Record
Access Rights
open access
Relations
[ISSN]1345-5583
[NCID]AA11422756
[isVersionOf]
[URI]http://memoirs.lib-e.yamaguchi-u.ac.jp/
Schools
工学部