Study of Transition Stage of Crystal Growth for the poly-Si Prepared by Excimer Laser Annealing Method

The crystal growth mechanisum for the poly-Si prepared by excimer laser annealing method is studied from a viewpoint of the transition stage between the solid phase crystallization for the low energy density and the nucleation and growth from the super cooled liquid for the high energy density. The preferred orientation, the crystallinity and the surface morphology are measured and the characteristics of the disk-shaped grain are clarified. Furthermore, the total mechanism of the recrystallized poly-Si is discussed.

ELA

SPC

SCL

poly-Si grains

disk-shaped grain

crystal growth mechanism