Memoirs of the Faculty of Engineering, Yamaguchi University

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Memoirs of the Faculty of Engineering, Yamaguchi University Volume 29 Issue 1
published_at 1978

Silicon Nitride Films by RF Reactive Sputtering

RF 反応性スパッタ法によるシリコン窒化膜
Kurata Katsumasa
Miyata Naoyuki
Miyake Kiyoshi
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KJ00000156230.pdf
About This Article
Descriptions
Silicon nitride films (from 400A to 3700A in thickness) have been prepared on glass substrates by RF reactive sputtering of a silicon cathode in N_2 gas or Ar-N_2 gas mixtures. Gas pressure was in the range of 1&acd
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