Contents Menu

Silicon Nitride Films by RF Reactive Sputtering

Memoirs of the Faculty of Engineering, Yamaguchi University Volume 29 Issue 1 Page 97-102
published_at 1978
KJ00000156230.pdf
[fulltext] 449 KB
Title
RF 反応性スパッタ法によるシリコン窒化膜
Silicon Nitride Films by RF Reactive Sputtering
Creators Kurata Katsumasa
Creators Miyata Naoyuki
Creators Miyake Kiyoshi
Source Identifiers
Silicon nitride films (from 400A to 3700A in thickness) have been prepared on glass substrates by RF reactive sputtering of a silicon cathode in N_2 gas or Ar-N_2 gas mixtures. Gas pressure was in the range of 1&acd
Subjects
電気電子工学 ( Other)
Languages jpn
Resource Type departmental bulletin paper
Publishers 山口大学工学部
Date Issued 1978
File Version Version of Record
Access Rights open access
Relations
[ISSN]0372-7661
[NCID]AN00244228
Schools 工学部