InSb Thin-Film Transistor

In this paper a new model, which is valid in both enhancement and depletion mode, is developed for the mechanism of the thin-film transistor. In the model it is assumed that the structure of the evaporated InSb film has Petritz' barrier-model and this barrier-model is valid for the conduction mechanism in the transistor. According to this barrier-model the semiconductor film consists of high and low-resistance region. The new model can explain the discrepancy mentioned frequently between the Hall mobility and field-effect mobility. The new model is verified by measurements on depletion-type InSb thin-film transistor.