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Characterization of semipolar {11$ \bar 2 $2} light-emitting diodes using a hole blocking layer

Physica Status Solidi (C) Current Topics in Solid State Physics Volume 11 Issue 3-4

Behavior of misfit dislocations in semipolar InGaN/GaN grown by MOVPE

Physica status solidi. C, Current topics in solid state physics : PSS Volume 9 Issue 3-4

Creators : Kuwahara Takaaki | Kuwano Noriyuki | Kurisu Akihiko | Okada Narihito | Tadatomo Kazuyuki Publishers : Wiley-VCH Verlag GmbH & Co. KGaA Date Issued : 2012-03

Growth of {11-22} GaN on shallowly etched r-plane patterned sapphire substrates

Physica status solidi. C, Current topics in solid state physics : PSS Volume 9 Issue 3-4

Creators : Furuya Hiroshi | Okada Narihito | Tadatomo Kazuyuki Publishers : Wiley-VCH Verlag GmbH & Co. KGaA Date Issued : 2012-03